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Pheda1412
X-Ray Dynamic Flat Panel Detector
d on advanced CMOS imaging technology, Pheda1412 have high resolution and low noise with pixel size of 100μm. This series detectors can provide high quality imaging at low dose scenes with excellent sensitivity and signal-to-noise ratio.
They are suitable for a variety of industrial non-destructive testing applications, such as electronic parts testing, micro CT, lithium battery testing, casting parts testing, automotive, aerospace manufacturing quality control.
They are suitable for a variety of industrial non-destructive testing applications, such as electronic parts testing, micro CT, lithium battery testing, casting parts testing, automotive, aerospace manufacturing quality control.
Product Features
100μm pixel size
1404×1204 pixel matrix
Long irradiation life(20kGy)
Applications
- Electronic component inspection
- Micro CT
- Lithium battery inspection
- Casting inspection
- Automobile, spaceflight, electronic manufacturing quality control
Specfication
Transducers
Type
CMOS
Pixel size
100µm
Pixel matrix
1404×1204
Effective area
140.4×120.4mm²
Scintillator
CsI/GOS
Irradiation lifetime
20kGy
Energy Range
40kV～160kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable side and location
Other
Interface
RJ45（Ethernet protocol interface）
Power supply
DC12V±10%
Consumption
≤10W
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+60ºC
Product Comparison
Comparison
| Model | Type | Pixel size | Pixel matrix | Effective area | Rate | Scintillator | Irradiation lifetime | Energy Range | Acquisition mode | Trig mode | ROI | Interface | Power supply | Consumption | Usage environment | Storage environment | Weight | External dimensions(W×L×H) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Pheda1613D | a-Si(TFT) | 125μm | 1274×1024 | 160×128mm²（6×5in） | CsI | 20kGy | 40kV~230kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC24V±10% | ≤12W | +5ºC~+35ºC | -20ºC~+60ºC | ||||
| Pheda1412-5G | CMOS | 100µm | 1404×1204 | 140.4×120.4mm² | CsI | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤15W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1512 | CMOS | 100µm | 1440×1120 | 144.0×112.0mm² | CsI/GOS | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda0606A | CMOS | 49.5μm | 1172×1260 | 58.0×62.4mm² | CsI | 10kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口） | DC12V±10% | ≤4W | +10ºC~+40ºC | -20ºC~+55ºC | ||||
| Pheda1313 | CMOS | 100µm | 1280×1280 | 128.0×128.0mm² | CsI/GOS | 20kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1215A | CMOS | 49.5μm | 2940×2342 | 145.5×115.9 mm² | CsI | 10kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤6W | +10ºC~+40ºC | -20ºC~+60ºC |